SOI substrate manufacturing method and SOI substrate
US10804137B2 · kind B2 · utility
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5References
18Claims
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Key dates
| Filing date | Jul 19, 2016 |
| Grant date | Oct 13, 2020 |
| Priority date | — |
| Expiry date | Jan 4, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/018
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An SOI substrate manufacturing method and an SOI substrate are provided, where the method includes: forming a patterned etch-stop layer in an oxide layer of a first silicon substrate, bonding a surface, having the patterned etch-stop layer (130), of the first silicon substrate with a surface of a second silicon substrate, and peeling off a part of the first silicon substrate to form a patterned SOI substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.