Patent · US Active

Induced warpage of a thermal conductor

US10804168B2 · kind B2 · utility

0Cited by
1References
19Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 19, 2019
Grant dateOct 13, 2020
Priority date—
Expiry dateAug 19, 2039

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/3511
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Particular embodiments described herein provide for a silicon layer, where the silicon layer includes a profile and a thermal conductor coupled to the silicon layer, where the thermal conductor includes one or more residual stresses. The thermal conductor is modified based on the one or more residual stress such that when pressure is applied to the thermal conductor, a profile of the thermal conductor at least approximately matches the profile of the silicon layer. In an example, the thermal conductor is modified by removing material from one or more areas of the thermal conductor and the thermal conductor is coupled to the silicon layer by one or more pressure inducing mechanisms.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.