Semiconductor power module comprising graphene
US10804182B2 · kind B2 · utility
0Cited by
4References
20Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 13, 2017 |
| Grant date | Oct 13, 2020 |
| Priority date | — |
| Expiry date | Dec 13, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/72
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention is concerned with a semiconductor power module comprising an electrically and thermally conductive base plate (14) and a semiconductor chip (12) and where a first layer of graphene (32) is placed between the semiconductor chip (12) and the base plate (14) in electrical and thermal contact with a first side the base plate (14). Thereby the cooling of the semiconductor power module is improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.