Semiconductor structures with improved bonding and fabrication methods thereof

US10804224B2 · kind B2 · utility

Assignees

• Semiconductor Manufacturing International (Shanghai) Corporation · CN
• Semiconductor Manufacturing International (Beijing) Corporation · CN

Inventor

• Hai Li · Shanghai, CN

Key dates

• Filing date: Mar 29, 2017
• Grant date: Oct 13, 2020
• Expiry date: Mar 29, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76898
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for fabricating a semiconductor structure includes providing a wafer and a carrier wafer. The wafer includes a first bonding surface and a plurality of radio-frequency (RF) devices and the carrier wafer includes a second bonding surface. The method further includes performing a surface treatment process on the second bonding surface to convert a surface portion of the carrier wafer into a barrier layer to suppress movement of induced electrical charges in the carrier wafer, and then bonding the wafer with the carrier wafer through the first bonding surface and the second bonding surface, respectively.