Semiconductor device
US10804272B2 · kind B2 · utility
5Cited by
59References
9Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 16, 2017 |
| Grant date | Oct 13, 2020 |
| Priority date | — |
| Expiry date | Jul 6, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D88/01
Abstract
A semiconductor device capable of retaining data for a long time is provided. A leakage current path between adjacent memory cells in a memory cell array included in the semiconductor device is blocked without increasing the number of manufacturing steps, so that memory retention characteristics can be improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.