Crystalline oxide semiconductor film, crystalline oxide semiconductor device, and crystalline oxide semiconductor system
US10804362B2 · kind B2 · utility
3Cited by
0References
20Claims
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Key dates
| Filing date | Aug 29, 2017 |
| Grant date | Oct 13, 2020 |
| Priority date | — |
| Expiry date | Aug 29, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a first aspect of a present inventive subject matter, a crystalline oxide semiconductor film includes a crystalline oxide semiconductor that contains a corundum structure as a major component, a dopant, and an electron mobility that is 30 cm2/Vs or more.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.