Semiconductor device
US10804392B2 · kind B2 · utility
4Cited by
8References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 13, 2019 |
| Grant date | Oct 13, 2020 |
| Priority date | — |
| Expiry date | Dec 13, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/62
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a semiconductor layer of a first conductivity type. A well region that is a second conductivity type well region is formed on a surface layer portion of the semiconductor layer and has a channel region defined therein. A source region that is a first conductivity type source region is formed on a surface layer portion of the well region. A gate insulating film is formed on the semiconductor layer and has a multilayer structure. A gate electrode is opposed to the channel region of the well region where a channel is formed through the gate insulating film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.