Resistive random access memory and manufacturing method thereof

US10804465B2 · kind B2 · utility

Assignee

• TSINGHUA UNIVERSITY · CN

Inventors

• Huaqiang Wu · Nanhu, CN
• Wei Wu · Baoshan, TW
• Bin Gao · Beijing, CN
• He Qian · Wuxi, CN

Key dates

• Filing date: Sep 6, 2018
• Grant date: Oct 13, 2020
• Expiry date: Sep 6, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8828

Abstract

A resistive random access memory and a manufacture method thereof are provided. The resistive random access memory includes: a first electrode, a second electrode, a resistive layer between the first electrode and the second electrode, and at least one thermal enhanced layer; the thermal enhanced layer is adjacent to the resistive layer, and a thermal conductivity of the thermal enhanced layer is less than a thermal conductivity of the first electrode and a thermal conductivity of the second electrode.