Organic thin film transistor structure and manufacturing method, gas sensor and related apparatus
US10804479B2 · kind B2 · utility
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16Claims
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Key dates
| Filing date | Jun 21, 2018 |
| Grant date | Oct 13, 2020 |
| Priority date | — |
| Expiry date | Jun 21, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/113
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Disclosed by the present disclosure are an organic thin film transistor structure and a manufacturing method, a gas sensor, and a related apparatus: a gap, which contacts an organic active layer and which is used for accommodating a gas to be detected, is provided in the organic thin film transistor structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.