Solid state imaging device having a charge draining mechanism
US10805563B2 · kind B2 · utility
12Cited by
35References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 19, 2018 |
| Grant date | Oct 13, 2020 |
| Priority date | — |
| Expiry date | Sep 26, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8057
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
According to an aspect of the present invention, provided is a solid state imaging device including a plurality of pixels, and each of the pixels has a charge accumulation region of a first conductivity type that accumulates signal charges corresponding to an incident light, a drain region of the first conductivity type to which a predetermined voltage is applied, a drain gate located between the drain region and the charge accumulation region in a planar view, and a semiconductor region of the first conductivity type connected to the charge accumulation region and the drain region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.