Optoelectronic semiconductor light source and Bragg mirror
US10808893B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Mar 4, 2019 |
| Grant date | Oct 20, 2020 |
| Priority date | — |
| Expiry date | Mar 4, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/0078
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An optoelectronic semiconductor light source includes a semiconductor chip configured to emit primary radiation, a Bragg mirror, and a luminescence conversion element configured to convert at least part of the primary radiation into secondary radiation having a longer wavelength, wherein the Bragg mirror is arranged between the semiconductor chip and the luminescence conversion element, the Bragg mirror is reflective for the secondary radiation and transmissive for the primary radiation, the Bragg mirror includes reflector layers of at least three different materials with different refractive indices, the Bragg mirror includes at least two different kinds of layer pairs, each kind of layer pairs being made up of reflective layers of two different materials, and the different kinds of layer pairs having different Brewster angles for p-polarized radiation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.