Patent · US Active

Surface treatment of semiconductor sensors

US10809225B2 · kind B2 · utility

1Cited by
24References
17Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJul 1, 2015
Grant dateOct 20, 2020
Priority date
Expiry dateMar 10, 2036

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG01N27/4145
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

A sensor component includes a sensor including a sensor surface and a reaction site in cooperation with the sensor and exposing the sensor surface. The reaction site including a reaction site surface. A surface agent is bound to the reaction site surface or the sensor surface. The surface agent includes a surface active functional group reactive with Bronsted base or Lewis acid functionality on the reaction site surface or the sensor surface and including distal functionality that does not have a donor electron pair.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.