Patent · US Active

Semiconductor-based hall sensor

US10809318B2 · kind B2 · utility

2Cited by
9References
24Claims
0Family size

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Inventors

Key dates

Filing dateNov 1, 2013
Grant dateOct 20, 2020
Priority date—
Expiry dateMar 5, 2036

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG01R33/07
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

There is provided a hall sensor. The hall sensor includes a hall element disposed on a semiconductor substrate. The hall element includes: a sensing region, a first electrode, a second electrode, a third electrode and a fourth electrode, and a doped region disposed on the sensing region, and the sensing region has at least one angulated corner or rounded corner.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.