Mn—Zn—O sputtering target and production method therefor
US10811237B2 · kind B2 · utility
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4Claims
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Key dates
| Filing date | Nov 2, 2016 |
| Grant date | Oct 20, 2020 |
| Priority date | — |
| Expiry date | Dec 28, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B2007/2432
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
Provided is a Mn—Zn—O sputtering target which can be used in DC sputtering, and a production method for the target. The Mn—Zn—O sputtering target comprises a chemical composition containing Mn, Zn, O, and at least one element X, the element X being a single one or two elements selected from the group consisting of W and Mo. The target has a relative density of 90% or more and a specific resistance of 1×10−3 Ω·cm or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.