Patent · US Active

Ceramic substrate and method for producing a ceramic substrate

US10811329B2 · kind B2 · utility

0Cited by
3References
13Claims
0Family size

Assignee

Inventors

Key dates

Filing dateFeb 10, 2016
Grant dateOct 20, 2020
Priority date
Expiry dateFeb 10, 2036

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/19106
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

The present invention relates to a ceramic substrate (100) comprising: a front side (100-1), which comprises: i) a power semiconductor (102-1, . . . , 102-n); and ii) a first metallic layer (104) comprising at least one first metallic plane contact (104-1, . . . , 104-n), which is configured to connect the power semiconductor (102-1, . . . , 102-n) to a first terminal (105-1, . . . , 105-n) on an edge (100-3) of the ceramic substrate (100); a back side (100-2), which comprises: i) a capacitor (103) which is attached to a ii) second metallic layer (108) comprising at least one second metallic plane contact (108-1, . . . , 108-n), which is configured to connect the capacitor (103) to a second terminal (107-1, . . . , 107-n) on the edge (100-3) of the ceramic substrate (100); and a metallic frame (110), which is configured to connect the first metallic layer (104) to the second metallic layer (108).

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.