Method for manufacturing back channel etching type oxide semiconductor TFT substrate
US10811444B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 14, 2017 |
| Grant date | Oct 20, 2020 |
| Priority date | — |
| Expiry date | Nov 24, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/1213
Abstract
The present application provides a method for fabricating a back channel etching oxide semiconductor TFT substrate, by depositing the first passivation layer on the source, the drain and the active layer, and treating the oxygen element containing plasma to a surface of the first passivation layer, infiltrating traces of oxygen element into the superficial layer of the channel region of the active layer through the first passivation layer, then using an oxygen element containing plasma to treat the surface of the first passivation layer, so that the traces of oxygen element infiltrates into the superficial layer of the channel region of the active layer via the first passivation layer, to supply the oxygen element to the superficial layer of the channel region, and ensure the oxygen element balance in the superficial layer, the first passivation layer acts as a barrier layer to ensure the stability of the TFT.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.