Multi layered thermal sensor
US10811556B2 · kind B2 · utility
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Key dates
| Filing date | Dec 25, 2018 |
| Grant date | Oct 20, 2020 |
| Priority date | — |
| Expiry date | Jan 12, 2039 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01J2005/204
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method for manufacturing a thermal sensor, the method may include forming, using ion etching, one or more first holes that pass through (a) an initial layer, (a) a first oxide layer, (c) a first semiconductor substrate; filling the one or more first holes with oxide to form supporting elements; fabricating one or more thermal semiconductor sensing elements; forming one or more second holes in the one or more upper layers and the first oxide layer; applying an isotropic etching process to remove the first semiconductor substrate and expose the supporting elements to provide a suspended first oxide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.