Organic-inorganic hybrid material and method for silicon surface passivation
US10811558B2 · kind B2 · utility
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Key dates
| Filing date | Jun 22, 2017 |
| Grant date | Oct 20, 2020 |
| Priority date | — |
| Expiry date | Jun 22, 2037 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/549
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A relevant technological challenge is the low cost and abundant materials development for silicon surface passivation for applications in optoelectronic devices, in particular in solar cells by scalable industrial methods. In the present invention, a new hybrid material comprising PEDOT:PSS and transparent conducting oxide nanostructures is developed and a method is proposed to fabricate the composite material that passivates well the silicon surface to be used by means of a thin composite film of thickness below 200 nm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.