Method for manufacturing indium gallium nitride/gallium nitride quantum-well pyramid
US10811559B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 26, 2018 |
| Grant date | Oct 20, 2020 |
| Priority date | — |
| Expiry date | Jan 1, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/819
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing an indium gallium nitride/gallium nitride quantum-well pyramid is provided to improve upon the complexity of the conventional method for manufacturing light-emitting diode die. The method for manufacturing an indium gallium nitride/gallium nitride quantum-well pyramid includes performing a first epitaxial reaction and then a second epitaxial reaction on a substrate under 600-650° C. to form a gallium nitride pyramid, growing an first indium gallium nitride layer on an end face of the gallium nitride pyramid, where the end face is away from the substrate, and growing a first gallium nitride layer on the first indium gallium nitride layer. A flux ratio of nitrogen to gallium of the first epitaxial reaction is 25:1-35:1, and a flux ratio of nitrogen to gallium of the second epitaxial reaction is 130:1-150:1.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.