Semiconductor light emitting device and semiconductor light emitting device package using the same
US10811568B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 6, 2018 |
| Grant date | Oct 20, 2020 |
| Priority date | — |
| Expiry date | Nov 6, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/841
Abstract
A semiconductor light emitting device includes a first conductivity-type semiconductor layer including a recessed region and a protruding region, an active layer and a second conductivity-type semiconductor layer on the protruding region, a reflective electrode layer disposed on the second conductivity-type semiconductor layer, an insulating layer including a first opening disposed on a contact region of the first conductivity-type semiconductor layer and a second opening disposed on a contact region of the reflective electrode layer, a first conductive pattern disposed on the insulating layer, and extending into the first opening to be electrically connected to the contact region of the first conductivity-type semiconductor layer, a second conductive pattern disposed on the insulating layer, and extending into the second opening to be electrically connected to the reflective electrode layer, and a multilayer insulating structure covering the first and second conductive patterns.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.