N-doped semiconducting material comprising two metal dopants

US10811608B2 · kind B2 · utility

Assignee

• Novaled GmbH · DE

Inventors

• Tomas Kalisz · Dresden, DE
• Francois Cardinali · Dresden, DE
• Jerome Ganier · Dresden, DE
• Uwe Gölfert · Rabenau, DE
• Vygintas Jankus · Dresden, DE
• Carsten Rothe · Dresden, DE
• Benjamin Schulze · Dresden, DE
• Steffen Willmann · Dresden, DE

Key dates

• Filing date: Nov 9, 2016
• Grant date: Oct 20, 2020
• Expiry date: Nov 9, 2036

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/549
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

The present invention relates to a semiconducting material comprising (i) a substantially covalent matrix material consisting of at least one substantially covalent matrix compound, (ii) at least one first metal selected from the group consisting of Li, Na, K, Rb, and Cs, and (iii) at least one second metal selected from the group consisting of Zn, Hg, Cd and Te, electronic devices comprising such materials and processes for preparing the same.