Patent · US Active

Fabricating photonics structure light signal transmission regions

US10816724B2 · kind B2 · utility

2Cited by
114References
24Claims
0Family size

Assignee

Inventors

Key dates

Filing dateApr 2, 2019
Grant dateOct 27, 2020
Priority date
Expiry dateApr 2, 2039

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/4857
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

There is set forth herein a method including depositing a layer formed of barrier material over a conductive material formation of a photonics structure; and removing material of the layer in a light signal transmitting region of the photonics structure. In one embodiment the barrier material can include silicon carbon nitride. In one embodiment the barrier material can include silicon nitride.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.