Fabricating photonics structure light signal transmission regions
US10816724B2 · kind B2 · utility
2Cited by
114References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 2, 2019 |
| Grant date | Oct 27, 2020 |
| Priority date | — |
| Expiry date | Apr 2, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/4857
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
There is set forth herein a method including depositing a layer formed of barrier material over a conductive material formation of a photonics structure; and removing material of the layer in a light signal transmitting region of the photonics structure. In one embodiment the barrier material can include silicon carbon nitride. In one embodiment the barrier material can include silicon nitride.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.