Optoelectronic device

US10816830B2 · kind B2 · utility

Assignee

• Rockley Photonics Limited · GB

Inventors

• Andrew George Rickman · Preshute, GB
• Aaron John Zilkie · Pasadena, US
• Guomin Yu · Glendora, US
• Hooman Abediasl · Los Angeles, US
• Damiana Lerose · Pasadena, US
• Amit Singh Nagra · Altadena, US
• Pradeep Srinivasan · Fremont, US
• Haydn Frederick Jones · Grafton, GB

Key dates

• Filing date: Feb 13, 2019
• Grant date: Oct 27, 2020
• Expiry date: Feb 13, 2039

Classification

• Technology area (CPC —): General

Abstract

An optoelectronic device and method of making the same. The device comprising: a substrate; an epitaxial crystalline cladding layer, on top of the substrate; and an optically active region, above the epitaxial crystalline cladding layer; wherein the epitaxial crystalline cladding layer has a refractive index which is less than a refractive index of the optically active region, such that the optical power of the optoelectronic device is confined to the optically active region.