Production method of thin-film transistor, thin-film transistor, array substrate, and display panel
US10818706B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | May 29, 2018 |
| Grant date | Oct 27, 2020 |
| Priority date | — |
| Expiry date | May 29, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
Abstract
There are provided a thin-film transistor and a production method thereof, an array substrate, and a display panel. The method comprises forming an active layer, a gate insulating layer, and a gate electrode on a substrate, wherein conductor conversion treatment is performed on both sides of the homogeneous active material layer to obtain an active layer, and the active layer comprises conductor regions located at both sides and a non-conductor region located at the center, wherein a projection of the gate electrode on the substrate is within a projection of the non-conductor region on the substrate, and the distances from the projection of the gate electrode to projections of the two conductor regions on the substrate are each between 0 micrometer and 1 micrometer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.