Solid-state imaging device and imaging system
US10818708B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jul 9, 2019 |
| Grant date | Oct 27, 2020 |
| Priority date | — |
| Expiry date | Jul 9, 2039 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06T2207/30252
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A photoelectric conversion unit includes first, second, and third semiconductor regions having first, second, and first conductivity types, respectively. A fourth semiconductor region between the first and third semiconductor regions at the same depth as the second semiconductor region. A charge holding portion includes a fifth semiconductor region of the first conductivity type. A transfer transistor has a region between the first and fifth semiconductor regions as a channel portion. A pixel isolation portion includes a sixth semiconductor region of the second conductivity type between the third semiconductor regions of adjacent pixels. A relationship V6>V5>V4 is satisfied, where a potential of the fourth semiconductor region to charges is V4, a potential of a region having the highest potential to charges in the channel portion with the transfer transistor being in an off-state is V5, and a potential of the sixth semiconductor region to charges is V6.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.