Solid state imaging device and manufacturing method thereof
US10818715B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 20, 2018 |
| Grant date | Oct 27, 2020 |
| Priority date | — |
| Expiry date | Jun 20, 2038 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
Abstract
According to one aspect of the invention, provided is a solid state imaging device having a pixel including a photoelectric conversion portion provided in a semiconductor substrate. The photoelectric conversion portion includes first and second charge accumulation region of a first conductivity type provided at a first depth of the semiconductor substrate and spaced apart from each other by a first gap, and first and second semiconductor region of a second conductivity type provided at a second depth located under the first depth of the semiconductor substrate and extend over the first charge accumulation region, the first gap, and the second charge accumulation region in a planar view. At the second depth, an impurity concentration of the second conductivity type in a region under the first gap is higher than an impurity concentration of the second conductivity type in a region under the first and second charge accumulation regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.