Semiconductor device
US10818790B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 7, 2019 |
| Grant date | Oct 27, 2020 |
| Priority date | — |
| Expiry date | Jun 7, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/822
Abstract
A semiconductor device includes a gate stack over a semiconductor substrate. A spacer extends substantially along a first sidewall of the gate stack. An epitaxy structure is in the semiconductor substrate. A liner wraps around the epitaxy structure and has an outer surface in contact with the semiconductor substrate and an inner surface facing the epitaxy structure. The outer surface of the liner has a first facet extending upwards and towards the gate stack from a bottom of the first liner and a second facet extending upwards and towards an outer sidewall of the spacer from a top of the first facet to a top of the liner, such that a corner is formed between the first facet and the second facet, and the inner surface of the first liner defines a first curved corner pointing towards the corner formed between the first facet and the second facet.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.