Display panel, array substrate, thin film transistor and method for manufacturing the same

US10818798B2 · kind B2 · utility

Assignees

• HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD. · CN
• BOE Technology Group Co., Ltd. · CN

Inventors

• Yingbin Hu · Beijing, CN
• Ce Zhao · Beijing, CN
• Yuankui Ding · Beijing, CN
• Jun Wang · Nanhu, CN
• Jun Liu · Tangxia, CN
• Guangyao Li · Beijing, CN
• Yongchao Huang · Beijing, CN
• Wei Li · Beijing, CN
• Liangchen Yan · Beijing, CN

Key dates

• Filing date: May 13, 2019
• Grant date: Oct 27, 2020
• Expiry date: May 13, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/60

Abstract

A method for manufacturing a thin film transistor includes forming a light shielding layer and a buffer layer covering the light shielding layer on a substrate. The method includes forming an active layer including a peripheral region and a channel region. The method includes forming a gate insulating layer covering the channel region and forming a contact hole exposing the light shielding layer. The method includes forming a source region and a drain region disposed on both sides of the channel region. The method includes forming an electrode layer including a gate electrode, a source electrode and a drain electrode spaced apart one another. The method includes forming a dielectric layer covering the gate electrode, the source electrode, the drain electrode and the buffer layer.