Apparatus for and method of fabricating semiconductor devices
US10818839B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 2, 2018 |
| Grant date | Oct 27, 2020 |
| Priority date | — |
| Expiry date | Oct 30, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/826
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An apparatus of fabricating a semiconductor device may include a chamber including a housing and a slit valve used to open or close a portion of the housing, a heater chuck provided in a lower region of the housing and used to heat a substrate, a target provided over the heater chuck, a plasma electrode provided in an upper region of the housing and used to generate plasma on the target, a heat-dissipation shield surrounding the inner wall of the housing between the plasma electrode and the heater chuck, and an edge heating structure provided between the heat-dissipation shield and the inner wall of the housing and configured to heat the heat-dissipation shield and an edge region of the substrate and to reduce a difference in temperature between center and edge regions of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.