Quantum dot light emitting devices

US10818860B2 · kind B2 · utility

Assignees

• Rohm and Haas Electronic Materials LLC · US
• DOW GLOBAL TECHNOLOGIES LLC · US

Inventors

• Anatoliy N. Sokolov · Midland, US
• Brian W. Goodfellow · Midland, US
• Robert David Grigg · Midland, US
• Liam P. Spencer · Lake Jackson, US
• John W. Kramer · Midland, US
• David D. Devore · Midland, US
• Sukrit Mukhopadhyay · Midland, US
• Peter Trefonas, III · Medway, US

Key dates

• Filing date: Jun 26, 2017
• Grant date: Oct 27, 2020
• Expiry date: Jun 26, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10K2102/361

Abstract

The present invention provides a quantum dot light emitting diode comprising i) an emitting layer of at least one semiconductor nanoparticle made from semiconductor materials selected from the group consisting of Group II-VI compounds, Group II-V compounds, Group III-VI compounds, Group III-V compounds, Group IV-VI compounds, Group I-III-VI compounds, Group II-IV-VI compounds, Group II-IV-V compounds, or any combination thereof; and ii) a polymer for hole injection or hole transport layer; and the polymer comprises, as polymerized units, at least one or more monomers having a first monomer structure comprising a) a polymerizable group, b) an electroactive group with formula NAr1Ar2Ar3 wherein Ar1, Ar2 and Ar3 independently are C6-C50 aromatic substituents, and (c) a linker group connecting the polymerizable group and the electroactive group.