Composition for preparing silicon carbide ingot and method for preparing silicon carbide ingot using the same
US10822720B1 · kind B1 · utility
3Cited by
2References
7Claims
0Family size
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Key dates
| Filing date | May 29, 2020 |
| Grant date | Nov 3, 2020 |
| Priority date | — |
| Expiry date | May 29, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02002
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for preparing a SiC ingot includes loading a composition of a raw material comprising a carbon source and a silicon source into a reactor; placing a plurality of seed crystal on one side of the reactor spaced apart from the composition; and sublimating the composition such that the SiC ingot grows from the plurality of seed crystal. A flow factor of the composition may be 5 to 35.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.