Method to improve MOCVD reaction process by forming protective film
US10822721B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 18, 2018 |
| Grant date | Nov 3, 2020 |
| Priority date | — |
| Expiry date | Nov 8, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/013
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method to improve the MOCVD reaction by protection film on the stainless steel body in the MOCVD reaction chamber. The film is composed of the elements of the gas required during the MOCVD deposition process, or the elements that will not react with the reaction gases of MOCVD. The film is a compound of at least one of Al, Ga and Mg and at least one of oxygen or nitrogen, or other materials with stable chemical characteristics that will not react with the gases in the MOCVD process. The film could reduce the initialization time of the MOCVD process, and improve the efficiency of the MOCVD equipment. The protection film has compact organization with porosity of less than 1%, and thickness of 1 nm to 0.5 mm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.