Thin film transistor, sensor, biological detection device and method
US10823697B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 3, 2019 |
| Grant date | Nov 3, 2020 |
| Priority date | — |
| Expiry date | May 17, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6734
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The present disclosure provides a thin film transistor, a sensor, a biological detection device and a method. The thin film transistor includes a substrate, a first gate, a first dielectric layer, a source, a drain, a semiconductor layer, a second dielectric layer, and a second gate. The first gate is on the substrate. The first dielectric layer is on the substrate and the first gate. The source, the drain, and the semiconductor layer are on a side of the first dielectric layer facing away from the first gate. The second dielectric layer is on the first dielectric layer and the semiconductor layer. A material of the second dielectric layer is a solid state electrolyte material. The second gate is on a side of the second dielectric layer facing away from the semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.