Reference voltage circuit and semiconductor device
US10824181B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 27, 2020 |
| Grant date | Nov 3, 2020 |
| Priority date | — |
| Expiry date | Jan 27, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/84
- WIPO fieldControl
- WIPO sectorInstruments
Abstract
A reference voltage circuit includes a first MOS transistor pair having a first MOS transistor of an enhancement type having a gate and a drain connected to each other, and a second MOS transistor of a depletion type having a gate connected to a source of the first MOS transistor, a source connected to the drain of the first MOS transistor, and a drain connected to an output terminal; and a second MOS transistor pair having a third MOS transistor of an enhancement type having a gate and a drain connected to the output terminal and a source connected to the source of the second MOS transistor, and a fourth MOS transistor of a depletion type having a gate connected to the source of the third MOS transistor and a source connected to the output terminal. All the MOS transistors operate in a weak inversion region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.