Magnetoresistive memory module and computing device including the same
US10824365B2 · kind B2 · utility
2Cited by
1References
16Claims
0Family size
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Key dates
| Filing date | Mar 19, 2019 |
| Grant date | Nov 3, 2020 |
| Priority date | — |
| Expiry date | Mar 19, 2039 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02D10/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetoresistive memory module used as a main memory of a computing device is provided. A plurality of memory chips are mounted on a printed circuit board, and a memory controller performs data scrubbing. Each memory chip includes a plurality of magnetoresistive memory cells. Each magnetoresistive memory cell includes a magnetoresistive element and an access transistor that transfers a current to the magnetoresistive element, and has a size of a cell area that is substantially similar to a size of a DRAM cell area.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.