Material composition and methods thereof

US10825684B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Shu-Hao Chang · Taipei, TW
• Chien-Chih Chen · Hsinchu, TW
• Kuo-Chang Kau · Yuanli, TW
• Jeng-Horng Chen · Hsinchu, TW
• Pi-Yeh Chia · Sanxing, TW
• Chi-Ren Chen · Zhubei City, TW
• Ying-Chih Lin · Tainan, TW

Key dates

• Filing date: Jan 6, 2017
• Grant date: Nov 3, 2020
• Expiry date: Aug 6, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76892
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

Provided is a material composition and method for that includes providing a substrate and forming a resist layer over the substrate. In various embodiments, the resist layer includes a multi-metal complex including an extreme ultraviolet (EUV) absorption element and a bridging element. By way of example, the EUV absorption element includes a first metal type and the bridging element includes a second metal type. In some embodiments, an exposure process is performed to the resist layer. After performing the exposure process, the exposed resist layer is developed to form a patterned resist layer.