Patent · US Active

Method for producing an integrated circuit, integrated circuit, x-ray detector and x-ray device

US10825729B2 · kind B2 · utility

0Cited by

1References

16Claims

0Family size

Assignee

Siemens Healthcare Limited · DE

Inventors

Michael Hosemann · Erlangen, DE
Kay VIEHWEGER · Dresden, DE

Key dates

Filing date	Apr 16, 2019
Grant date	Nov 3, 2020
Priority date	—
Expiry date	Apr 16, 2039

Classification

Technology area (CPC H)Electricity
CPC primaryH01L22/32
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method is for producing an integrated circuit. In an embodiment, a metallic contact structure, for a through silicon via with a contact area, is applied onto a silicon substrate without an insulating intermediate layer. An interconnection structure, with at least one insulating layer and at least one interconnection layer, is applied onto the silicon substrate. The contact structure is or will be contacted with the interconnection layer or at least one of the possibly plurality of interconnection layers, and a diode structure for blocking a current flow between the contact area of the metallic contact structure and the silicon substrate is introduced into the silicon substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.