Patent · US Active

Pixel structure

US10825879B1 · kind B1 · utility

0Cited by
3References
18Claims
0Family size

Assignee

Inventors

Key dates

Filing dateOct 25, 2019
Grant dateNov 3, 2020
Priority date
Expiry dateOct 25, 2039

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10K59/131

Abstract

A pixel structure includes a substrate and a thin-film transistor having a first top surface and disposed above the substrate. The first top surface has a first projection area. A data line has a data line adjoining area connected to the thin-film transistor. A pixel electrode has a second top surface and disposed above the thin-film transistor. The second top surface has a second projection area that is greater than the first projection area. The second projection area has a first part and a second part; the first part corresponding to the first projection area is removed by at least 50%; and the second part corresponding to the data line adjoining area is at most 70% removed. The pixel structure omits an insulation layer under the pixel electrode to lower the cost of production and speed up the manufacturing process.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.