Semiconductor devices
US10825893B2 · kind B2 · utility
4Cited by
5References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 8, 2018 |
| Grant date | Nov 3, 2020 |
| Priority date | — |
| Expiry date | Jun 8, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/115
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a first electrode on a substrate, a second electrode on the substrate, a dielectric layer structure between the first electrode and the second electrode, and a crystallization inducing layer between the dielectric layer structure and the first electrode. The dielectric layer structure includes a first dielectric layer including a first dielectric material and a second dielectric layer on the first dielectric layer and including a second dielectric material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.