Thin film transistor having light shielding structure
US10825932B2 · kind B2 · utility
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15Claims
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Key dates
| Filing date | Apr 3, 2019 |
| Grant date | Nov 3, 2020 |
| Priority date | — |
| Expiry date | Apr 3, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6758
Abstract
Provided is a thin film transistor including a substrate, a first spacer on the substrate, a second spacer on the first spacer, a light shield layer intervened between the first spacer and the second spacer, a semiconductor layer on the second spacer, and a gate electrode on the semiconductor layer, wherein the light shield layer includes a plurality of inclined surfaces against a top surface of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.