Patent · US Active

Method of producing differently doped zones in a silicon substrate, in particular for a solar cell

US10825945B2 · kind B2 · utility

0Cited by

3References

14Claims

0Family size

Assignee

University of Konstanz · DE

Inventors

Sebastian Gloger · Konstanz, DE
Barbara TERHEIDEN · Konstanz, DE
Daniel Sommer · Stuttgart, DE
Axel Herguth · Konstanz, DE
Josh Engelhardt · Konstanz, DE

Key dates

Filing date	Jun 29, 2015
Grant date	Nov 3, 2020
Priority date	—
Expiry date	Sep 15, 2036

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY02P70/50
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

What is proposed is a method of producing at least two differently heavily doped subzones (3, 5) predominantly doped with a first dopant type in a silicon substrate (1), in particular for a solar cell. The method comprises: The method uses the observation that a borosilicate glass layer seems to promote an in-diffusion of phosphorus from a gas atmosphere and may substantially facilitate a manufacturing for example of solar cells, in particular back contact solar cells.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.