Radiation detector and method for producing same

US10825947B2 · kind B2 · utility

Assignee

• Forschungsverbund Berlin e.V. · DE

Inventors

• Adam Rämer · Berlin, DE
• Sergey M. Shevchenko · Lisle, US

Key dates

• Filing date: Jan 10, 2018
• Grant date: Nov 3, 2020
• Expiry date: Jan 10, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/475
• WIPO field: Telecommunications
• WIPO sector: Electrical engineering

Abstract

A radiation detector comprises an antenna structure; and a field effect transistor structure having a source region, a gate region, and a drain region, arranged on a substrate and forming mutually independent electrically conductive electrode structures through metallization, wherein the gate electrode structure completely encloses the source electrode structure or the drain electrode structure in a first plane; the enclosed electrode structure extends up to above the gate electrode structure and there overlaps the enclosure in a second plane above the first plane at least in sections in a planar manner; wherein an electrically insulating region for forming a capacitor with a metal-insulator-metal structure is arranged between the regions of the gate electrode structure overlapped by the enclosed electrode structure.