Light-emitting diode

US10825957B1 · kind B1 · utility

Assignee

• Xiamen Sanan Optoelectronics Technology Co., Ltd. · CN

Inventors

• Gaolin Zheng · Xiamen, CN
• Hou-Jun Wu · Xiamen, CN
• Anhe HE · Xiamen, CN
• Shiwei Liu · Halifax, CA
• Kang-Wei PENG · Xiamen, CN
• Su-Hui Lin · Xiamen, CN
• Chia-Hung Chang · Xiamen, CN

Key dates

• Filing date: May 29, 2020
• Grant date: Nov 3, 2020
• Expiry date: May 29, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/841

Abstract

A light-emitting diode includes: a semiconductor epitaxial structure including a first semiconductor layer, a second semiconductor layer disposed over the first semiconductor layer, an active layer between the first and second semiconductor layers; a first electrode electrically coupled to the first semiconductor layer and including a plurality of first sub-electrodes, wherein the plurality of first sub-electrodes are divided into one or more groups, and any two adjacent first sub-electrodes in the same group have a same projection distance; a second electrode disposed over and electrically coupled to the second semiconductor layer; a third electrode coupled to the plurality of first sub-electrodes and including one or more third sub-electrodes, wherein one of the third sub-electrodes corresponds to one of said one or more groups of the first sub-electrodes and connects first sub-electrodes in the group; and a fourth electrode coupled to the second electrode.