Atomic layer deposition of lead sulfide for infrared optoelectronic devices

US10826005B2 · kind B2 · utility

Assignees

• TOYOTA MOTOR EUROPE · BE
• The Governing Council of the University of Toronto · CA

Inventors

• Sachin KINGE · Steenokkerzeel, BE
• Jixian XU · Toronto, CA
• Brandon Sutherland · Mississauga, CA
• Sjoerd HOOGLAND · Toronto, CA
• Edward Hartley Sargent · Toronto, CA

Key dates

• Filing date: Sep 24, 2015
• Grant date: Nov 3, 2020
• Expiry date: Sep 24, 2035

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/549

Abstract

A PIN type infrared photodiode including a first electrode, a n-type semiconductor, an atomic layer deposition coating of lead sulfide, a p-type semiconductor and a second electrode, wherein the n-type semiconductor comprises nanowires conformally coated with the atomic layer deposition coating of lead sulfide.