Quantum dot light-emitting diode and display apparatus thereof
US10826009B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 25, 2017 |
| Grant date | Nov 3, 2020 |
| Priority date | — |
| Expiry date | Aug 25, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K2102/351
Abstract
A quantum dot light-emitting diode and a display apparatus comprising the quantum dot light-emitting diode are provided. The quantum dot light-emitting diode comprises an anode, a hole injecting layer, a hole transporting layer, a quantum dot light-emitting layer, an electron transporting layer and a cathode from bottom to top, wherein the materials of the quantum dot light-emitting layer contain quantum dots and CuSCN nano-particles. By blending quantum dots and CuSCN nano-particles into a membrane to prepare a quantum dot light-emitting layer, a hole trap state on the surface of the quantum dots is passivated, and the transporting effect of a hole is improved, so that the injection of holes in the quantum dot light-emitting diode and that of electrons achieve balance, and thus the light-emitting efficiency and stability are improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.