Patent · US Active

Electro-optically active device

US10831043B2 · kind B2 · utility

4Cited by

9References

21Claims

0Family size

Assignee

Rockley Photonics Limited · GB

Inventors

Guomin Yu · Glendora, US
Yi Zhang · Pasadena, US
Aaron John Zilkie · Pasadena, US

Key dates

Filing date	May 30, 2019
Grant date	Nov 10, 2020
Priority date	—
Expiry date	May 30, 2039

Classification

Technology area (CPC G)Physics
CPC primaryG02F2202/108
WIPO fieldOptics
WIPO sectorInstruments

Abstract

A silicon based electro-optically active device and method of producing the same, the device comprising: a silicon-on-insulator (SOI) waveguide; an electro-optically active stack within a cavity of the SOI waveguide, wherein the electro-optically active stack is separated from an insulator layer of the electro-optically active device by a seed layer; and a channel between the electro-optically active stack and the SOI waveguide; wherein the channel is filled with a filling material with a refractive index greater than that of a material forming a sidewall of the cavity to form a bridge-waveguide in the channel between the SOI waveguide and the electro-optically active stack.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.