Patent · US Active

Systems and methods for improving write preambles in DDR memory devices

US10832760B2 · kind B2 · utility

0Cited by

0References

20Claims

0Family size

Assignee

Micron Technology, P.C. · US

Inventors

Daniel B. Penney · Wylie, US
David R. Brown · Lucas, US
Gary L. Howe · Allen, US

Key dates

Filing date	Nov 21, 2019
Grant date	Nov 10, 2020
Priority date	—
Expiry date	Nov 21, 2039

Classification

Technology area (CPC G)Physics
CPC primaryG11C2207/2254
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A memory device includes a data write circuitry. The data write circuitry is configured to capture a first write command received via an external input/output (I/O) interface. The data write circuitry is further configured to generate a first internal write start (InternalWrStart) in a data strobe (DQS) domain after capture of the first write command. The data write circuitry is additionally configured to write a first one or more data bits into at least one memory bank based on the first InternalWrStart, wherein the first InternalWrStart is generated internally in the memory device.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.