Method for programming a non-volatile memory device and corresponding non-volatile memory device
US10832780B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jun 5, 2019 |
| Grant date | Nov 10, 2020 |
| Priority date | — |
| Expiry date | Jun 5, 2039 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/0425
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method can be used for programming a group of memory cells of a non-volatile memory device in a programming window that has a duration longer than a programming duration of a memory cell. The programming window is subdivided into a number of time intervals. A programming profile that was determined by simulation while taking into account a reference criterion is retrieved. The programming profile includes, for each time interval, a maximum number of memory cells that can be triggered for programming within each time interval. The memory device is programmed in the programming window, interval-wise, using the programming profile.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.