Patent · US Active

Electrooptical device

US10833056B2 · kind B2 · utility

0Cited by

3References

16Claims

0Family size

Assignee

IHP GMBH—INNOVATIONS FOR HIGH PERFORMANCE MICROELECTRONICS / LEIBNIZ-INSTITUT FÜR INNOVATIVE MIKROELEKTRONIK · DE

Inventors

Patrick Steglich · Berlin, DE
Andreas Mai · Guben, DE
Christian Mai · Großostheim, DE
Sigurd Schrader · Berlin, DE

Key dates

Filing date	Dec 17, 2018
Grant date	Nov 10, 2020
Priority date	—
Expiry date	Dec 17, 2038

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY02E10/50
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

The invention relates to an electrooptical device comprising a semiconductor substrate having a front side and a back side, at least one photonic component arranged on the front side of the semiconductor substrate, the photonic component comprising an active layer made of a non-linear optical material, wherein at least one cavity, extends through the semiconductor substrate and connects the active layer on the front side of the semiconductor substrate with the back side of the semiconductor substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.