Ferroelectric memories
US10833091B2 · kind B2 · utility
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4References
16Claims
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Key dates
| Filing date | Feb 8, 2019 |
| Grant date | Nov 10, 2020 |
| Priority date | — |
| Expiry date | Feb 8, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/694
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A ferroelectric memory is provided. The ferroelectric memory includes a first electrode, a second electrode opposite to the first electrode, at least one ferroelectric layer disposed between the first electrode and the second electrode, and at least one antiferroelectric layer disposed between the first electrode and the second electrode, wherein the antiferroelectric layer is in contact with the ferroelectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.